各测试参数定义.pptVIP

MOSFET DivisionTechnical Training7th April 2005 MOSFET Basic InformationMain Electrical ParametersProduction (Assy Testing) Flow ChartDevelopment and Characterization ActivitiesDatasheetReliability..AGENDA MOSFET Technical Training  Device Structure Characteristics Vertically oriented four layer structure (n+ p n- n+) High input impedance- voltage controlled device- easy to drive Unipolar device- majority carrier device- fast switching speed Wide SOA N++PP+N-N+MetalDielettricPolysilicon Gate OxideZoom on MOSFET Structure DGSSGDMOS PIN individuation on the StructureN-P+N+ SGDMOS Parassitic Elements: Body DiodeN-P+DGSN-P+N+ N-P+N+SGDGDSMOS Parassitic Elements: BJT N-P+N+SGDMOS Parassitic Elements: C, RpDCRpSG N-P+N+SGDMOS Parassitic Elements: JFETGDSCRp MOSFET Basic OperationGS++-VGS VThVDS 0ID = 00102030010203040ID [A]102030040VDS [V]102030 MOSFET Basic Operation+GSD++-VGS ? VThVDS 0ID ? 00102030010203040ID [A]102030040VDS [V]102030N+NPinversion layer MOSFET Basic OperationGSD++-VGS VThVDS 0ID 00102030010203040ID [A]102030040VDS [V]102030Increasing VGOn state resistance RON MOSFET Basic OperationBVDSS [ V ]10100100010000RON AREA [mW cm2 ]1001100.11000 MOSFET’s CapacitancesDGSCdsCgsCgdCiss = CGD + CGS Coss = CDS + CGDCrss = CGD Input CapacitanceOutput CapacitanceMiller Capacitance Note: Normally we don’t measure these parameters in production.We characterize and guarantees by F/E process. Low Breakdown values: 12V – 1000V Low Rdson values: Till 1.5 mΩ High current: Till 250A/160A Low Driving Gate Voltage: Till 2.5V .. 1.8V Main MOSFET Features P/N Nomenclature for MOSFET DevicesSTP70NF03LaC = TSSOP8T = SOT23-6LN = SOT-223L = PowerFLATSJ = PowerSO-8SR= PowerSO-8 ReverseS = SO-8D…T4 = DPAK (Tape Reel)B…T4 = D2PAK (Tape Reel)V = PowerSO-10Q = TO-92D…-1 = IPAKB…-1 = I2PAKP = TO-220P…FP = TO-220FP F = TO-220FP for new productsW = TO-247Y = Max247E = ISOTOPPackage TYPEIndicative Current RangeChannel PolarityE = EHD1 (STripFET 1st generation)