单源真空共蒸发制备CuInS2光伏薄膜的中期报告.docxVIP

单源真空共蒸发制备CuInS2光伏薄膜的中期报告 摘要 本文研究了单源真空共蒸发制备CuInS2光伏薄膜的中期进展。通过对实验条件的优化，成功制备了质量较高、晶粒较大、表面较平整的CuInS2薄膜。同时，利用X射线衍射和扫描电子显微镜对薄膜的晶体结构和表面形貌进行了表征。进一步的光电性能测试表明，制备的CuInS2薄膜具有良好的光吸收性能和电导性能，相较于传统的化学浴沉积方法有更高的转换效率。因此，单源真空共蒸发是一种可行的、高效的制备CuInS2光伏薄膜的方法。 关键词: 单源真空共蒸发；CuInS2光伏薄膜；光电性能 Abstract This paper reports the midterm progress in the preparation of CuInS2 photovoltaic films by single-source vacuum co-evaporation. By optimizing the experimental conditions, CuInS2 films with higher quality, larger grain size, and smoother surface were successfully prepared. The crystal structure and surface morphology of the films were characterized by X-ray diffraction and scanning electron microscopy. Further photovoltaic performance tests showed that the prepared CuInS2 films had good light absorption and conductivity performance, and had higher conversion efficiency compared to traditional chemical bath deposition methods. Therefore, single-source vacuum co-evaporation is a feasible and efficient method for preparing CuInS2 photovoltaic films. Keywords: single-source vacuum co-evaporation; CuInS2 photovoltaic film; photovoltaic performance.