CMOS RFIC衬底噪声分析及其对VCO性能的影响的中期报告.docx

CMOS RFIC衬底噪声分析及其对VCO性能的影响的中期报告 摘要： CMOS无线射频集成电路（RFIC）的发展成为了新一代无线通讯中的重要技术之一。在RFIC中，向下转换混频器和振荡器都是其中的重要模块，往往会受到噪声对性能的限制。本报告研究了CMOS RFIC中衬底噪声对振荡器性能的影响，并通过仿真分析验证了模型的准确性。 针对CMOS RFIC中衬底噪声的存在，本文通过研究模拟电路的噪声分析理论，对RFIC中的衬底噪声进行详细分析，并利用电路仿真软件ADS对其进行仿真验证。通过仿真结果的分析可以看出，衬底噪声会对振荡器的性能产生显著影响，包括振荡频率的变化和相位噪声的增加。 为了进一步验证模型的准确性，本文还对比了不同电压、不同尺寸的CMOS RFIC的衬底噪声和振荡器性能。通过对比分析可以发现，衬底噪声对振荡器的影响与电压大小和尺寸有着密切的关系。 最后，本文总结了衬底噪声对CMOS RFIC振荡器性能的影响，并提出了降低衬底噪声的方法，包括加强接地和引入抑制电路等。 关键词：CMOS RFIC；衬底噪声；振荡器；仿真分析；性能分析 Abstract: The development of CMOS RFIC has become one of the important technologies in the new generation of wireless communication. In RFIC, the down-conversion mixer and oscillator are important modules, which are often limited by noise. This report studies the influence of substrate noise on the performance of the oscillator in CMOS RFIC, and verifies the accuracy of the model through simulation analysis. To address the presence of substrate noise in CMOS RFIC, this paper analyzes the substrate noise in RFIC in detail using the theory of noise analysis of analog circuits, and verifies it by simulating it using the circuit simulation software ADS. The simulation results show that substrate noise has a significant impact on the performance of the oscillator, including changes in the oscillation frequency and an increase in the phase noise. To further validate the accuracy of the model, this paper also compared the substrate noise and oscillator performance of different voltages and sizes of CMOS RFIC. Through comparative analysis, it can be found that the influence of substrate noise on the oscillator is closely related to the voltage and size. Finally, this paper summarizes the impact of substrate noise on the performance of CMOS RFIC oscillators, and proposes methods to reduce substrate noise, including strengthening grounding and introducing suppression circuits. Keywords: CMOS RFIC; substrate noise; oscillator; simulation analysis; performance analysis