铜制程化学机械平坦化缺陷分析及改善研究的中期报告.docxVIP

铜制程化学机械平坦化缺陷分析及改善研究的中期报告 摘要： 在铜制程中，化学机械平坦化（CMP）是至关重要的步骤。缺陷问题是影响CMP过程的重要因素之一，本研究主要分析了铜CMP过程中的缺陷类型和产生原因，并提出了改善措施。 通过对CMP过程中的常见缺陷进行分类和统计分析，我们识别出了其中最常见的缺陷类型包括凸起、坑洼、崩边、覆铜不良等，分别对应不同的产生原因。其中，凸起和坑洼缺陷通常由于磨粒颗粒的不均匀分布和切削力的波动引起；崩边缺陷则主要是由于压力、速度等CMP参数设置不当；覆铜不良通常是在前一步骤——化学气相沉积（CVD）过程中产生，包括残留的有机杂质以及金属氧化等。 为改善CMP的缺陷问题，我们提出了以下改善措施：1）优化磨粒颗粒的分布和选择；2）调整CMP参数，如压力、速度、转速等，以减少崩边缺陷；3）在CVD过程中，加强清洗去除有机杂质和氧化物积累，以避免覆铜不良问题。 本研究的结果有助于更好地理解铜制程中的CMP过程及其缺陷来源，同时提供了一些改善方案，为实际生产中的铜制程改善工作提供了有价值的参考和指导。 关键词：铜制程、化学机械平坦化、缺陷、改善措施 Abstract: In the copper process, chemical mechanical planarization (CMP) is a crucial step. Defects are one of the key factors that affect the CMP process. In this study, we mainly analyzed the types and causes of defects in the copper CMP process and proposed improvement measures. By classifying and statistically analyzing common defects in the CMP process, we identified the most common types of defects, including protrusions, pits, edge destruction, and poor copper coverage, each of which corresponds to a different cause. Protrusion and pit defects are usually caused by the uneven distribution of abrasive particles and fluctuations in cutting force. Edge destruction defects are mainly caused by inappropriate CMP parameters, such as pressure, speed, and rotation speed. Poor copper coverage is usually caused by residual organic impurities and metal oxidation in the prior step, chemical vapor deposition (CVD). To improve the defect problem in CMP, we propose the following improvement measures: 1) optimizing the distribution and selection of abrasive particles; 2) adjusting CMP parameters, such as pressure, speed, and rotation speed, to reduce edge destruction defects; 3) strengthening cleaning in the CVD process to remove organic impurities and prevent metal oxidation. The results of this study contribute to a better understanding of the CMP process in copper processing and its defect sources, as well as providing some improvement measures for actual production. It provides valuable re