水热法制备纳米线阵列.docx

督）/国绅苍我/大苍 University of Science and Technology of China 水热法制备锥状ZnO纳米线阵列及其光电性研究 摘要 ZnO是一种在光电领域中具有重要地位的半导体材料。采用聚乙二醇(PEG(2000))辅助 的水热合成法制备出了粒径较为均匀的锥状氧化锌纳团线阵列，并用SEM、XRD对其进行 了表征。实验结果表明，表面活性剂(PEG22000)和氨水的加入量对ZnO纳米线阵列的形貌有 直接的影响;分析出了不同体系中的化学反应过程及生长行为，研究了衬底状态、生长溶液 浓度、生长时间、pH值等工艺参数对薄膜生长的影响，并对薄膜柱晶等特殊形貌晶体的生 长机理进行了探讨。研究表明：薄膜的晶粒成核方式主要为异质成核，柱晶的生长方式为 层-层生长。生长的ZnO柱晶的尺寸和尺寸分布与晶种层ZnO晶粒有着相同的变化趋势。 随着生长液浓度的增加，ZnO棒晶的平均直径明显增大。生长体系长时间放置，会导致二 次生长，形成板状晶粒。NH3-H2O生长系统，可以调节pH值来控制薄膜的生长。对于碱 性溶液体系，ZnO合适的生长温度为70?90°C，通过调节温度，可以改变纳米棒的生长速率。 关键词：ZnO薄膜,低温,水热法，薄膜生长 HYDROTHERMAL SYNTHESIS OF ZnO NANOWIRE ARRAYSCONE AND OPTOELECTRONIC RESEARCH ABSTRACT ZnO is an important area in the status of photovoltaic semiconductor material.Polyethylene glycol (PEG (2000)) assisted hydrothermal synthesis were prepared by a more uniform particle size of zinc oxide nano cone line array group and use SEM, XRD characterization was carried out. The results show that surfactant (PEG22000) and ammonia addition on the morphology of ZnO nanowire arrays have a direct impact; analyze the different systems of chemical reactions and growth behavior of the state of the substrate, growth concentration, growth time, pH, and other process parameters on film growth, and morphology of thin film transistors and other special column crystal growth mechanism was discussed. The results show that: the film grain nucleation is mainly heterogeneous nucleation, crystal growth patterns column for the layer - layer growth. The growth of ZnO crystal size and column size distribution of ZnO grain and seed layer have the same trend. With the increase in the growth of concentration, ZnO rods significantly increased the average diameter of crystal.Growth system extended period of time will lead to secondary growth, the formation of tabular grains. NH3 H2O growth system, you can adjust the pH value to control the film growth. The alkaline solution system, ZnO is a suitable growth temperature 70 ~ 90 °C, by adjusting the temperature, can change the grow