集成稳压器中双极晶体管抗电离辐照性能研究的中期报告.docxVIP

集成稳压器中双极晶体管抗电离辐照性能研究的中期报告 Abstract: This mid-term report describes the research progress on the radiation hardness of bipolar transistors in integrated voltage regulators. Bipolar transistors are commonly used in voltage regulators for space applications due to their high stability and low noise characteristics. However, they are vulnerable to ionizing radiation in space environments. In this research, we are studying the radiation tolerance of bipolar transistors through experimental testing and simulation. Introduction: Radiation effects can cause significant damage to electronic systems in space environments. In particular, ionizing radiation can create free electrons and holes in semiconductor materials, which can lead to the degradation of electronic devices. To ensure the reliability and longevity of electronic systems in space, it is important to understand the effects of ionizing radiation on electronic devices and develop strategies to mitigate those effects. Bipolar transistors are commonly used in voltage regulators for space applications because of their high stability and low noise characteristics. However, bipolar transistors are vulnerable to ionizing radiation, which can cause displacement damage and impact the transistors electrical characteristics. The aim of this research is to study the radiation tolerance of bipolar transistors and develop strategies to improve their radiation hardness. Experimental Testing: In this research, we are studying the radiation tolerance of bipolar transistors using experimental testing and simulation. For experimental testing, we have irradiated bipolar transistors with Co-60 gamma rays and measured the transistors radiation response. The testing results show that the bipolar transistors exhibit degradation in their electrical characteristics after exposure to ionizing radiation. The degradation includes an increase in the base current and a decrease in the current gain of the transistor. Simulation: In addition to e