Wet-and-Dry-Etching湿法与干法刻蚀.pptVIP

WetandDryEtching

湿法和干法刻蚀

NANO-MASTER

那诺-马斯特中国有限公司

吴运祥

2019年8月16日

各向同性和各向异性

henamaterialisattackedbyaliquidorvaporetchant,itis

removedisotropically(uniformlyinalldirections)

anisotropicetching(uniformityinverticaldirection)The

differencebetweenisotropicetchingandanisotropicetchingis

showninFigure1.Materialremovalrateforwet-etchingis

usuallyfasterthantheratesformanydryetchingprocesses

andcaneasilybechangedbyvaryingtemperatureorthe

concentrationofactivespecies

Figure1.(a)Completelyanisotropic(b)Partiallyanisotropicand(c)Isotropicetchingofsilicon

湿法刻蚀

Synonyms:chemicaletching,liquidetching

湿法刻蚀定义

letetchingisamaterialremovalprocessthatusesliquid

chemicalsoretchantstoremovematerialsfromawafer.the

specificpattersaredefinedbymasksonthewafer.Materials

thatarenotprotectedbythemasksareetchedawayby

liquidchemicals.Thesemasksaredepositedandpatterned

onthewafersinapriorfabricationstepusinglithography.[2]

Awetetchingprocessinvolvesmultiplechemicalreactions

thatconsumetheoriginalreactantsandproducenew

reactants.Thewetetchprocesscanbedescribedbythree

basicsteps.(1)

湿法刻蚀

Diffusionoftheliquidetchanttothestructurethatistobe

removed.(2)Thereactionbetweentheliquidetchantandthe

materialbeingetchedaway.Areduction-oxidation(redox)

reactionusuallyoccurs.Thisreactionentailstheoxidationof

thematerialthendissolvingtheoxidizedmaterial.3

Diffusionofthebyproductsinthereactionfromthereacted

surface

各向异性的湿法刻蚀:

Liquidetchantsetchcrystallinematerialsatdifferentrates

dependinguponwhichcrystalfaceisexposedtotheetchant

Thereisalargedifferenceintheetchratedependingonthe

siliconcrystallineplane

湿法刻蚀

Inmaterialssuchassilicon,thiseffectcanallowforveryhigh

anisotropy.Someoftheanisotropicwetetchingagentsfor

siliconarepotassiumhydroxide(KoH),ethylenediamine

p