深圳市羽楷科技AP3G20NF 3A 200V N+P PDFN5X6-8L.pdfVIP

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深圳市羽楷科技AP3G20NF 3A 200V N+P PDFN5X6-8L.pdf

AP3G20NF

200VN+P-ChannelEnhancementModeMOSFET

Description

heAP3G20NFissiliconN-channelEnhanced

VDMOSFETs,isobtainedbytheself-alignedplanarTechnology

whichreducetheconductionloss,improveswitching

performanceandenhancetheavalancheenergy.Thetransistor

canbeusedinvariouspowerswitchingcircuitforsystem

miniaturizationandhigherefficiency.

GeneralFeatures

V=200V

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