JXP4606SRG 30V N沟道和P沟道增强型MOSFET SOP8 深圳恒锐丰科技.pdf

靖芯JXP4606SRG

STBCHIP30VNandP-ChannelEnhancementMOSFET

DESCRIPTIONSCHEMATICDIAGRAM

TheJXP4606SRGusesadvancedtrench

D1D2

technologytoprovideexcellentRDS(ON)andlow

gatecharge.ThecomplementaryMOSFETmay

beusedtoformalevelshiftedhighsideswitch,andG1G2

forahostofotherapplications.

GENERALFEATURES

S1S2

N-channel：

p-channeln-channel

VDS=30V,ID=7A

RDS(ON)(Typ.)=18mΩ@VGS=10V

PINASSIGNMENT

RDS(ON)(Typ.)=27mΩ@VGS=4.5V

P-Channel：SOP-8

VDS=-30V,ID=-7ATopViewBottomView

RDS(ON)(Typ.)=24mΩ@VGS-10V

RDS(ON)(Typ.)=30mΩ@VGS-4.5V

Verylowon-resistanceRDS(ON)

150°Coperatingtemperature

Pb-freeleadplating

APPLICATION

XXYY:XX—years，YY—weeks

DC/DCConverter

PACKAGE

Idealforhigh-frequencyswitchingand

synchronousrectificationSOP-8

ORDERINGINFORMATION

PartNumberStorageTemperaturePackageMarkingDevicesPerReel

JXP4606SRG-55°Cto+150°CSOP-8JXP4606/XXYY4000

ABSOLUTEMAXIMUMRATINGS

(TA=25℃unlessotherwisenoted)

limit