JXP4614SRG 40V N沟道和P沟道增强型MOSFET SOP8 深圳恒锐丰科技.pdf

靖芯JXP4614SRG

STBCHIP40VNandP-ChannelEnhancementMOSFET

DESCRIPTIONSCHEMATICDIAGRAM

TheJXP4614SRGusesadvancedtrench

D1D2

technologytoprovideexcellentRDS(ON)andlow

gatecharge.ThecomplementaryMOSFETmay

beusedtoformalevelshiftedhighsideswitch,andG1G2

forahostofotherapplications.

GENERALFEATURES

S1S2

N-channel：

p-channeln-channel

VDS=40V,ID=8A

RDS(ON)(Typ.)=17mΩ@VGS=10V

PINASSIGNMENT

RDS(ON)(Typ.)=22mΩ@VGS=4.5V

P-Channel：SOP-8

VDS=-40V,ID=-6ATopViewBottomView

RDS(ON)(Typ.)=33mΩ@VGS-10V

RDS(ON)(Typ.)=41mΩ@VGS-4.5V

Verylowon-resistanceRDS(ON)

150°Coperatingtemperature

Pb-freeleadplating

APPLICATION

XXYY:XX—years，YY—weeks

DC/DCConverter

PACKAGE

Idealforhigh-frequencyswitchingand

synchronousrectificationSOP-8

ORDERINGINFORMATION

PartNumberStorageTemperaturePackageMarkingDevicesPerReel

JXP4614SRG-55°Cto+150°CSOP-8JXP4614/XXYY4000

ABSOLUTEMAXIMUMRATINGS

(TA=25℃unlessotherwisenoted)

limit