福建2025自考[大功率半导体科学]英语二考前冲刺练习题.docxVIP

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福建2025自考[大功率半导体科学]英语（二）考前冲刺练习题

一、选择题（共10题，每题1分，共10分）

说明：每题有四个选项，请选择最佳答案。

1.Whatistheprimaryadvantageofsiliconcarbide(SiC)oversilicon(Si)inpowerelectronics?

A.Lowercost

B.Highercriticalbreakdownfield

C.Betterthermalconductivity

D.Simplermanufacturingprocess

2.Thetermwidebandgapinsemiconductormaterialstypicallyrefersto:

A.Materialswithanarrowenergygap

B.Materialswithahighenergygap

C.Materialswithlowelectronaffinity

D.Materialswithhighmobility

3.WhichofthefollowingisacommonapplicationofGaN(galliumnitride)inpowerdevices?

A.LEDlighting

B.Mobilephonebatteries

C.Solarcells

D.Microwaveovens

4.ThereversetransfercharacteristicinaMOSFET(Metal-Oxide-SemiconductorField-EffectTransistor)isrelatedto:

A.Drain-sourcecurrentunderreversebias

B.Gate-sourcecapacitance

C.Thresholdvoltagevariation

D.Parasiticbodydiodeconduction

5.Whichmaterialisknownforitshighthermalconductivityamongpowersemiconductormaterials?

A.Silicondioxide(SiO?)

B.Siliconnitride(Si?N?)

C.Aluminumnitride(AlN)

D.Galliumarsenide(GaAs)

6.ThedriftregioninapowerBJT(BipolarJunctionTransistor)isprimarilyresponsiblefor:

A.Controllingthebasecurrent

B.Withstandinghighvoltages

C.Providingmajoritycarriers

D.Reducingswitchinglosses

7.WhichofthefollowingisakeychallengeinimplementingSiCpowerdevicesinhigh-temperatureenvironments?

A.Highthermalstability

B.Lowbreakdownvoltage

C.Materialdegradation

D.Enhancedefficiency

8.TheparasiticthyristoreffectinpowerMOSFETscanbemitigatedby:

A.Increasingthegateoxidethickness

B.Addingabodydiode

C.Reducingthechannellength

D.Usingahigherdopingconcentration

9.WhichofthefollowingmaterialsiscommonlyusedasaheatsinkmaterialinSiCpowermodules?

A.Copper(Cu)

B.Aluminum(Al)

C.Graphite(Gr)

D.Silicon(Si)

10.Thehotcarriereffectinpowerdevicesrefers