黑龙江2025自考[大功率半导体科学]英语二高频题考点.docxVIP

第PAGE页共NUMPAGES页

黑龙江2025自考[大功率半导体科学]英语（二）高频题(考点)

一、选择题（共10题，每题2分，合计20分）

1.Whatistheprimaryfunctionofasiliconcarbide(SiC)semiconductorinhigh-powerapplications?

A.Toreducepowerconsumption

B.Toenhancethermalconductivity

C.Toimproveelectricalinsulation

D.Tominimizevoltagedrop

2.WhichofthefollowingisacommonmaterialusedintheconstructionofpowerMOSFETs?

A.Galliumarsenide(GaAs)

B.Siliconnitride(Si?N?)

C.Siliconcarbide(SiC)

D.Aluminumoxide(Al?O?)

3.Inthecontextof黑龙江(Heilongjiang)powergridsystems,whatisthesignificanceofusingSiC-baseddevices?

A.Theyaremorecost-effectivethansilicon-baseddevices.

B.Theycanoperateathighertemperatureswithoutdegradation.

C.Theyrequirelessmaintenancethantraditionaldevices.

D.Theyareprimarilyusedforlow-powerapplications.

4.Whatisthetypicalbreakdownvoltageofa600VSiCMOSFET?

A.300V

B.600V

C.1200V

D.2400V

5.WhichofthefollowingisakeyadvantageofGaN(galliumnitride)transistorsoverSiCdevicesinhigh-frequencyapplications?

A.Lowercost

B.Higherswitchingspeed

C.Betterthermalconductivity

D.Morerobustmechanicalstructure

6.WhatistheprimaryreasonfortheincreasingadoptionofSiCdevicesin黑龙江srenewableenergysector?

A.Theyaremoreenergy-efficient.

B.Theyrequirelessspacethantraditionaldevices.

C.Theyaremoreenvironmentallyfriendly.

D.Theycanhandlehighercurrentdensities.

7.WhichofthefollowingisacommonissuewithSiCdevicesincoldclimateslike黑龙江?

A.Highthermalresistance

B.Reducedbreakdownvoltage

C.Increasedleakagecurrent

D.Lowerefficiencyduetomaterialdegradation

8.WhatisthetypicalthermalconductivityofSiCcomparedtosilicon(Si)?

A.Lower

B.Same

C.Higher

D.Indeterminate

9.WhichofthefollowingisakeybenefitofusingSiCdevicesin黑龙江sindustrialautomationsystems?

A.Theyaremorelightweight.

B.Theyoperatemorereliablyinextremetemperatures.

C