贵州2025自考[大功率半导体科学]英语二模拟题及答案.docxVIP

第PAGE页共NUMPAGES页

贵州2025自考[大功率半导体科学]英语（二）模拟题及答案

贵州省2025年高等教育自学考试《英语（二）》模拟题

专业：大功率半导体科学

第一部分：选择题（共20题，每题1分，计20分）

说明：每题有四个选项，请选择最佳答案。

1.Inthefieldofpowersemiconductordevices,thetermswitchinglossprimarilyrefersto:

A.Energylossduetohigh-frequencyoperation

B.Heatdissipationinstaticconditions

C.Reducedefficiencyatlowtemperatures

D.Materialdegradationovertime

(答案：A)

2.WhichofthefollowingmaterialsisnotcommonlyusedinGaN(GalliumNitride)devicesduetoitspoorthermalconductivity?

A.Siliconcarbide(SiC)substrates

B.Sapphire(Al?O?)substrates

C.Silicon(Si)substrates

D.GaN-on-GaNsubstrates

(答案：B)

3.TheIGBT(InsulatedGateBipolarTransistor)iswidelyadoptedinpowerelectronicsbecauseitcombinestheadvantagesof:

A.Lowinputcapacitanceandhighoutputcurrent

B.Highswitchingspeedandlowon-statevoltage

C.Simpledrivecircuitryandhighthermalstability

D.Alloftheabove

(答案：C)

4.In贵州，hybridSiCMOSFETsareincreasinglyusedinwindpowerconvertersduetotheirabilityto:

A.Operateathighertemperatureswithlowercoolingrequirements

B.Reducesystemcostby50%comparedtoGaNdevices

C.Eliminatetheneedforgateresistors

D.Improveefficiencyinlow-powerapplications

(答案：A)

5.TheAvalon?PowerseriesbyTexasInstrumentsisdesignedforapplicationssuchasindustrialmotordrives,whereEMI(ElectromagneticInterference)suppressioniscritical.TrueorFalse?

(答案：True)

6.AsiliconcarbideSchottkydiodetypicallyhasalowerforwardvoltagedropthanastandardsilicondiodeathighcurrentlevels.TrueorFalse?

(答案：True)

7.TheHBridgesin电动汽车(电动汽车)invertersareusuallydesignedwithflybackdiodestoprotectthetransistorsfrom:

A.Overvoltage

B.Undervoltage

C.Overcurrent

D.Gateoxidebreakdown

(答案：A)

8.In贵州，solarinvertersystemsoftenincorporatemulti-levelconvertersto:

A.Increaseefficiencybyreducingswitchinglosses

B.Reduceharmonicdistortion

C.Lowertheco