Ruichips-RU20P3B宏盛微优势代理64.pdfVIP

RU20P3B

P-ChannelAdvancedPowerMOSFET

MOSFET

FeaturesPinDescription

•-20V/-3A,

RDS(ON)=80mΩ(Typ.)@VGS=-4.5V

RDS(ON)=110mΩ(Typ.)@VGS=-2.5V

•LowRDS(ON)

•SuperHighDenseCellDesign

•ReliableandRugged

SOT-23

•LeadFreeandGreenAvailable

Applications

•PowerManagement

•LoadSwitch

P-ChannelMOSFET

AbsoluteMaximumRatings

SymbolParameterRatingUnit

CommonRatings(T=25°CUnlessOtherwiseNoted)

A

VDSSDrain-SourceVoltage-20

V

VGSSGate-SourceVoltage±12

TJMaximumJunctionTemperature150°C

TSTGStorageTemperatureRange-55to150°C

IDiodeContinuousForwardCurrentT=25°C-1.2A

SA

MountedonLargeHeatSink

IDP300μsPulseDrainCurrentTestedT=25°CA

A-12

T=25°C-3

A