Ruichips-RU30C10H宏盛微优势代理71.pdfVIP

RU30C10H

ComplementaryAdvancedPowerMOSFET

FeaturesPinDescription

•N-Channel

D2

30V/10A,

D2

RDS(ON)=16mΩ(Typ.)@VGS=10V

D1

RDS(ON)=32mΩ(Typ.)@VGS=4.5V

D1

•P-Channel

-30V/-8A,

G2

RDS(ON)=16mΩ(Typ.)@VGS=-10V

S2

RDS(ON)=23mΩ(Typ.)@VGS=-4.5V

G1

•ReliableandRugged

•ESDProtectedpin1S1

•LeadFreeandGreenDevicesAvailable(RoHSCompliant)SOP-8

Applications

•LoadSwitch

ComplementaryMOSFET

AbsoluteMaximumRatings

SymbolParameterN-ChannelP-ChannelUnit

CommonRatings(T=25°CUnlessOtherwiseNoted)

A

VDSSDrain-SourceVoltage30-30

V

VGSSGate-SourceVoltage±12±1