微电子技术论文7572167.pdfVIP

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  • 2026-04-17 发布于浙江
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4352IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER2016

AnalyticalModelandOptimizationforVariable

DriftRegionWidthSOILDMOSDevice

YingWang,Xiong-FeiMeng,Pan-PanTang,andSu-FenCui

Abstract—Inthispaper,weproposeananalyticalmodelforthe

variabledriftregionwidth(VDRW)silicon-on-insulatorlateral

double-diffusedMOS(SOILDMOS)device.Usingtheproposed

model,forexample,thebreakdownvoltage375V

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