具有载流子存储层超结-半超结IGBT器件的研制及其雪崩耐量研究.docxVIP

具有载流子存储层超结-半超结IGBT器件的研制及其雪崩耐量研究

关键词：绝缘栅双极晶体管；超结；半超结；载流子存储层；雪崩耐量；研究进展

Abstract:Withtherapiddevelopmentofpowerelectronicstechnology,high-efficiencyandhighlyreliableinsulatedgatebipolartransistors(IGBT)havebecomecorecomponentsofpowerconversionandcontrolsystems.Thisarticlereviewstheresearchprogressonultra-junction(SJ)andsemi-super-junction(SSJ)IGBTdevices,andfocusesontheresearchprocessandresultsofanewtypeofcarrierstoragelayerIGBTdevice,whichaimstoimprovethebreakdownresistance.Thisarticlefirstreviewsthebasicworkingprinciplean