热退火对溅射沉积钨氧化物薄膜的影响.docVIP

  热退火对溅射沉积钨氧化物薄膜的影响# 秦玉香，沈万江* （天津大学电子信息工程学院，天津 300072） 5 10 摘要：利用反应磁控溅射法在氧化铝基底上沉积氧化钨薄膜并分别与 200、300、400 和 600oC 空气气氛退火 4h。研究了热退火对氧化钨薄膜微结构和气敏性能的影响。利用 X-射线衍射 (XRD)、场发射扫描电子显微镜(FE-SEM)和 X-射线光电子能谱(XPS)表征了薄膜的表面形 貌、微结构和化学组成。当退火温度从 200oC 升高到 400oC 时， 薄膜从无定形态转变为三 斜结构，进一步升高退火温度将导致晶粒长大和结构孔收缩。与 600oC 退火的薄膜相比， 400oC 退火的薄膜具有更低的 O/W 比。NO2 敏感性能的测试结果表明，400oC 退火的氧化 钨薄膜由于具有疏松多孔结构和小的晶粒尺寸从而对 1 ppm NO2 气体显示出了较快的响应/ 恢复特性和最高的气体灵敏度。 关键词：氧化钨薄膜；退火；气体传感器；敏感性能 中图分类号：TP212 15 Thermal annealing effect on sputtered tungsten oxide thin films QIN Yuxiang, SHEN Wanjiang (School of electronic information engineering, Tianjin University, Tianjin 300072) 20 25 30 35 40 Abstract: Tungsten oxide thin films have been deposited on alumina substrates by reactive radio frequency (rf) magnetron sputtering, following by annealed in air at 200, 300, 400, and 600 oC for 4 h. The effects of thermal annealing on the microstructure and gas sensing properties of the tungsten oxide thin films were studied. The surface morphology, microstructure and chemical composition of the annealed films were investigated by X-ray diffraction(XRD), field emission scanning electron microscope (FE-SEM) and X-ray photoelectron spectroscopy (XPS) techniques. When raising the annealing temperature from 200oC to 400oC, the film tends to crystallize to triclinic structure from amorphous state, while higher temperature results in an increase in grain size and a shrinkage of structural pores. The film annealed at 400oC has lower O/W ratio than the one annealed at 600oC. The NO2-sensing properties of the annealed films were also evaluated, and the measurements revealed that the tungsten oxide film annealed at 400 oC has a quicker response/recovery and the highest sensitivity to 1ppm NO2 due to its loose and porous structure and small grain size. Key words: tungsten oxide film; gas sensors; annealing; sensing properties 0 Introduction Tungsten oxide (WO3-x), which is a wide band-gap n-type semiconductor, has been considered as a promis