纳米硅_单晶硅异质结的电学特性.docVIP

  纳米硅/单晶硅异质结的电学特性 周哲，刘爱民，杨臣** （大连理工大学物理与光电工程学院，辽宁 大连 116024） 5 10 摘要：本文主要研究了 i nc-Si:H/p c-Si 异质结的能带结构和载流子输运特性。采用 HWCVD 技术在 p 型单晶硅衬底上分别制备了晶化率为 66% 和 38%的本征纳米硅薄膜，测量了 1MHz 的高频 C-V 特性和 305-365K 温度范围的暗态变温 J-V 特性，通过 C-V 的结果我们发现晶化 率较高的纳米硅薄膜中缺陷分布不均匀，而晶化率较低的纳米硅薄膜中缺陷分布较均匀，并 且绘制出异质结的能带图。通过变温 J-V 的结果我们得到高晶化率薄膜和低晶化率薄膜异质 结电压在 0.15-0.43V 范围内分别为界面缺陷能级隧穿模型和多阶隧穿俘获发射模型的隧道 传输机制，电压在 0.43-0.68V 范围内分别是扩散电流和界面复合电流的输运机制。我们通 过比较高低晶化率薄膜缺陷态的差异，解释了形成多种电流输运机制的原因。 关键词：微电子与固体电子学；纳米硅薄膜；晶化率；异质结；能带结构；输运特性 中图分类号：O475 15 Electrical characteristics of nanocrystalline silicon / crystalline silicon heterojunctions Zhou Zhe, Liu Aimin, Yang Chen (School of physics optoelectronic technology, Dalian University of Technology, 20 25 30 35 40 45 LiaoNing DaLian 116024) Abstract: In this paper, we investigated the band structures and carrier transport properties of the i nc-Si:H/p c-Si heterojunction. Employing HWCVD technique, intrinsic silicon nanofilms were synthesized on the monocrystalline silicon substrate with a crystalline volume fraction of 66% and 38% respectively. Measurements of C-V curve at 1MHz showed that defects were randomly distributed in the silicon nanofilms of high crystalline volume fractions, but evenly distributed in the silicon nanofilms of low crystalline volume fractions. According to the C-V curve, we plotted the band structures of the silicon nanofilms. Results of J-V measurements under variable temperature indicated that for the films of high crystalline volume fractions, hole transport accorded with the interface trap tunneling model with a voltage range from 0.15 to 0.43 V, and obeyed the diffusion current mechanism with a voltage range from 0.15 to 0.43 V, respectively. As for the nanofilms of low crystalline volume fractions, hole transport complied with the multistep tunneling capture emission model with a voltage range from 0.15 to 0.43 V, and corresponded to the interface recombination current mechanism with a voltage range from 0.15 to 0.43 V, respectively. Through