可记忆电阻存储机理研究.docVIP

可记忆电阻存储机理研究 摘 要 早在1971年,任教于加州大学伯克利分校的华裔科学家蔡少棠就预测有第四个电路基本元件的存在，即可记忆电阻。并且用电荷和磁通量两者之间的关系来描述。时隔37年，2008年5月，HP科研小组在《自然》杂志上发表论文《寻获下落不明的可记忆电阻》，第一次证实了可记忆电阻的存在，给出了可记忆电阻的实物模型。之后，越来越多的人从不同方面对可记忆电阻进行探索研究。 新元件被称为可记忆电阻，是因为它能记住过去了的事情。通过向其施加方向、大小不同的电压，可以改变其阻值。每次切断电压时，可记忆电阻的阻值状态被冻结。但不管多久，重新接通电压后可记忆电阻会“记得”之前它的电阻。本文主要从理论方面，对可记忆电阻的电路特性进行研究与探索，同时对可记忆电阻的一些新特性从电磁场学的角度进行了相应的解释，并给出可记忆电阻的发现过程，系统地对其物理结构与数学模型进行阐述。 关键词：可记忆电阻，电路特性，物理结构, 数学模型  Mechanism study on Memristor Abstract In 1971, Leon Chua, a famous IEEE fellow of Chinese origin,who is now a professor in UC Berkeley, published a paper in the IEEE Transactions on Circuits Theory,Postulating the existence of a fourth circuit element from the symmetry and logic theory.It was called Memristor, and was characterized by a relationship between the charge and the flux-linkage. After nearly 40 years wait, Researchers at HP Laps have solved the mystery by proving the existence of a fourth basic element in integrated circuits in their paper 《found the missing memristor》，which was published in 《Nature》on may, 2008. From then, more and more researches on memristor are conducted at various levels. The new component is called as a memristor or memory resistor. because that is exactly its function: to remember its history. A memristor is a device whose resistance depends on the magnitude and polarity of the voltage applied to it and the length of time that voltage has been applied. When you turn off the voltage, the memristor remembers its most recent resistance until the next time you turn it on, whether that happens a day later or a year later.In this paper,we mainly make some research and analysis into the memristor theoretically, meanwhile, an electromagnetic field interpretation of the memrisor characterization will be presented, besides, the mathematical function as well as its physical model will be given. Keywords: memristor, circuit performance, physical model, mathematical function  第1章 绪论 1.1 课题研究背景和意义 1971年，任教于加州大学伯克