GaNGaNMg外延膜低温拉曼谱的对比研究.pdfVIP

第 18 卷 　第 2 期 光 　散 　射 　学 　报 Vol 18 　No 2 2006 年 6 月 THE JOURNAL OF L IGHT SCATTERIN G J une 2006 ( ) 文章编号 2006 Ga N 和 Ga N :Mg 外延膜低温拉曼谱的对比研究 王瑞敏 , 陈光德 ( 西安交通大学理学院 , 西安　710049) 摘 　要 : 对液氮温度下六方相 GaN 和掺 Mg 的 P 型 GaN 薄膜的拉曼谱进行了对比研究。除对两个样品中 主晶格振动模进行了对比分析外 ,着重讨论了位于 247 cm - 1 的散射峰的产生机制。结果表明 GaN :Mg 的 谱中该峰的散射强度随温度升高先增大再减小 ,在 500 K 以上消失且对样品重新降温到78 K 观察此峰不再 出现 ,因此认为它是缺陷产生的振动模。而 GaN 样品中经同样加热降温的过程此峰仍然存在 ,说明两个样 品中该峰的产生机制不同。此外 ,在 GaN :Mg 的谱中还观察到 Mg 诱导的局域振动模。 关键词 : GaN ; 低温拉曼谱 ; 缺陷模 中图法分类号: O433 , O474 　　　文献标识码 : A Comparative Analysis of Raman Spectra of Ga N and Ga N :Mg Epitaxial Layer at Low Temperature WAN G Ruimin , CHEN Guangde ( School of Science , Xi an Jiaoton g U niversity , Xi an S hanxi 710049) Abstract : Raman spectra of GaN and Mg - doped GaN films have been investigated. The host phonon modes of Mg - doped GaN were compared with those of undoped GaN. The origin of - 1 the peak at 247cm was discussed. In Mg - doped GaN sample the intensit y of this peak be came strong at first , but then became weak and disappeared at about 500 K. When the temper ature re - decreased to 78 K this peak is absent . We attributed it to the defect - induced vibra tional mode. But in undoped GaN the peak has different character , this implies the peak of GaN has different origin from which of GaN : Mg. The Mg - induced local vibrational modes have also been observed in the spectrum of GaN :Mg. Key wo