磁控溅射法制备ITO薄膜的结构及光电性能.pdfVIP

第 32 卷 　第 2 期 电 子 器 件 Vol . 32 　N o . 2 2009 年 4 月 　　　 Chinese J our nal Of Elect r on Devices 　　 Ap r . 2009 Microstructure and Optoelectrical Performance of ITO Film by DC Magnetron Sputtering GUI T ail ong , WA N G Gang , Z H A N G X i uf ang , L I A N G D ong ( ) A p p l ie d S cience Col leg e , H arbi n Uni v . S ci. Tech. , H arbi n 150080 , Chi na Abstract :By direct cur rent magnet ron met ho d u sing in dium o xide t ar get ( I TO , In O : SnO = 90 : 10 , 2 3 2 wt %) ,highly t ran sp arent and co nductive I TO coul d be succe ssf ully on gla ss sub st rat e at 100 ℃. The cry s t al st ruct ure an d surface shap e of t he film are analyzed by XRD , SEM and A FM . The light t ran smit t ance an d re si st ance are mea sured by W GD3 and ZS82 . St udy sp la sh power to t he t hin film deep ly t he influence of t he light rat e . The re sult manif e st t hat t he re si st ance decline s along wit h t he increment of t he sp la sh power . The light t ran smit t ance i s obviou sly imp roved aft er annealing . To t he p urp le light di st rict of t he 360 nm - 380 nm , t he light t ran smit t ance at t ain s lowe st . To t he red light di st rict of t he 760 nm - 800 nm , t he light t ran smit t ance at t ain s highe st . Key words :in dium tin o xide ( I TO) ;t hin film ;DC magnet ron sp ut t ering ;t ran smi ssivit y ; micro st ruct ure ;op toelect rical p erfor mance EEAC