移动式PMU的功率MOSFET故障：原因及设计考虑.pdfVIP

Texas Instruments Incorporated Power Management 移动式PMU的功率MOSFET故障： Power MOSFET failures in mobile PMUs: 原因及设计考虑 Causes and design precautions 作者： ，德州仪器 首席应用工程师 By Kern Wong Kern Wong (TI) Principal Applications Engineer 引言 Introduction It was suspected that a parasitic NPN (formed by n+ (S), Power MOSFETs in automotive systems and in mobile p– (well), and n+ (D) as shown in Figure 1) may have 汽车系统以及在汽车上充电或者工作的移动设备内部的 组成，如图 所示）可能猛然开启。图 显示了带寄 (D) 1 2 devices being charged or operated in automobiles may be turned on hard when the p– (well) base biased up the 功率MOS FET ，可能工作在恶劣的环境下，并承受来 生组件的MOSFET器件的等效电路模型。 subjected to harsh operating environments and intense emitter from n+ (S), a classic EOS scenario in power 自电源设备和发射器的大强度瞬态。另外，空气中以及 devices. Figure 2 shows an equivalent-circuit model of a transients from power equipment and transmitters. Moreover, caustic contaminants in the atmosphere and on MOSFET device with parasitic components. 电路板裸露导电表面的腐蚀性污染物，会引起低阻抗通 exposed conductive surfaces of circuit boards 路。时间一长，这些低阻抗通路和瞬态事件 can induce low-impedance paths. Over time, Figure 1. Cross-section of a typical MOSFET 图 典型 结构和相关寄生组件的模截面 1 MOSFET （例如：过载、电磁耦合和工作环境产生的 these low-impedance paths and transient structure and relevant parasitic elements events like overloading, electromagnetic cou- 易发尖峰等），会导致产生破坏性的电气过 pling, and inductively induced spikes from B_sub D G S B 应力 （ ）状态。这种状态可能会使强电 EOS the operating environment can cause destruc- RG tive electrical overstress (EOS