用于电子自旋光开关多量子阱材料研究.docVIP

摘 要 近年来，尤其是人们在室温下通过激子吸收漂白直接观察到了多量子阱中皮秒 量级的自旋弛豫现象之后，电子自旋弛豫特性及由此特性制作的全光开关就成了近 年来研究的热点。目前大多数关于全光超高速开关的研究都集中在 GaAs 多量子阱上， 相关理论已经相当成熟。但是，GaAs 量子阱的共振激发吸收峰（即开关的工作波长） 在 850nm 左右，不适合现代通信系统的 1550nm 传输窗口，而实验发现 InGaAsP 多量 子阱的电子自旋弛豫具有更快的速度，并且在 1550nm 波长处适合制作全光开关，因 此 InGaAsP 多量子阱材料在全光功能开关领域有着更为可观的应用前景。本文的主 要内容如下： （1）介绍基于电子自旋的全光功能开关的基本理论及其研究现状，比较 GaAs 和 InGaAsP 量子阱中的电子自旋弛豫时间和工作波长。 （2）介绍了弱束缚激子模型和二维激子模型中激子的基本性质，及量子阱中激 子的吸收和吸收饱和。 （3）采用有限深势阱模型，分别对晶格匹配和应变补偿两种情况计算了满足激 子吸收光子能量平衡时的组分和阱宽关系。 （4）根据基于电子自旋的全光开关的特性，计算了阱宽对电子自旋弛豫时间和 激子吸收系数的影响，得到阱宽这个参数是制作光开关时的重要参量的结论。 （5）根据计算结论制作出了InGaAsP多量子阱的外延片，并通过X射线衍射法及 光荧光谱进行检测，通过对检测数据的分析认为所制作的外延片基本与理论要求吻 合。  关键词：多量子阱  InGaAsP 激子  应变  电子自旋弛豫  I Abstract Recently, especially after the electron spin relaxation time of picosecond in quantum wells was measured at room temperature through exciton absorption bleaching, all-optical switching based on the electron spin relaxation in quantum wells has been the hotspot in recent research. Now most research concentrating optical switching is on GaAs MQW, while its working wavelength has been demonstrated around 850nm. On the other hand, InGaAsP MQW showed a faster spin relaxation time around 1550nm. So InGaAsP MQW has a more considerable application foreground in the field of all-optical switching. The main work is as follows: (1)The basic theory and status quo of all-optical switching on spin electronics are depicted, and the electron spin relaxation time and working wavelength are compared between GaAs and InGaAsP MQW. (2)The properties of exciton are depicted in weekly bound exciton model and two-dimensional exciton model, respectively. And the binding energy of heavy-hole exciton is calculated by the two-dimensional exciton model in InGaAsP MQW. (3)The ground energy of electron and heavy hole is calculated by the finite potential well model. Then the relations of composition and well width are calculated in lattice-matching and strain-compensation, respectively. (4) As spin relaxation depends on quantum well