Nature：柔性GaAs半导体制备方法.docxVIP

Nature：柔性GaAs半导体的制备方法虽然像砷化镓这样的化合物半导体在光伏电池和光电应用中与硅相比有很大的性能优势，但这些优势并不能超过生成这些材料的大型高质量层状结构、并将它们转移到柔性或透明基质上、用在如太阳能电池、夜视照相机和无线通信系统等设备中所涉及的高成本过程（所体现出的劣势）。然而现在，John Rogers及其团队演示了一个新的制造方法，它能克服这一缺点。他们是在一个单一沉降序列中、在厚的、多层组合体中来生长GaAs和AlGaAs薄膜的，然后将各层薄膜释放，通过印刷方式使其分布在异质基质上。.这一策略对于大面积应用的技术潜力，通过如以玻璃为基质的场效应晶体管和以塑料为基质的光伏电池模块等GaAs装置的制造得到了演示。GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assembliesJongseung Yoon1,5, Sungjin Jo1,4,5, Ik Su Chun2, Inhwa Jung1, Hoon-Sik Kim1, Matthew Meitl3, Etienne Menard3, Xiuling Li2, James J. Coleman2, Ungyu Paik4 John A. Rogers1,2Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USADepartment of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USASemprius, Inc., Durham, North Carolina 27713, USADivision of Materials Science Engineering, WCU Department of Energy Engineering, Hanyang University, Seoul 133-791, South KoreaThese authors contributed equally to this work.Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices1, 2 to radio-frequency electronics3, 4 and most forms of optoelectronics5, 6. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of d