宽禁带碳化硅功率器件在电动汽车中与研究与应用_王学梅.pdfVIP

34 3 Vol.34 No.3 Jan.25, 2014 2014 1 25 Proceedings of the CSEE ©2014 Chin.Soc.for Elec.Eng. 371 DOI 10.13334/j.0258-8013.pcsee.2014.03.007 0258-8013 (2014) 03-0371-09 TM 92 ( 510640) Researches and Applications of Wide Bandgap SiC Power Devices in Electric Vehicles WANG Xuemei (School of Electric Power, South China University of Technology, Guangzhou 510640, Guangdong Province, China) ABSTRACT: The third generation of wide bandgap semiconductor as silicon carbide (SiC) breakthroughs the 0 performance caps of silicon (Si) based power semiconductor devices in voltage, temperature, switching loss and switching (siliconSi) speed, thus, the weight, size and cost of power electronic (electric vehicleEV) converters may be decreased, and the performance of power electronic system may be improved significantly. Power driver (hybrid electric vehicleHEV) of electric vehicles with high power density is always the main development challenge of high power electric vehicles. The usage of wide bandgap semiconductors may has significant impacts on new generation electric vehicles, especially hybrid electric vehicles. In this paper, the development of SiC power devices is introduced first; then, research statues and application prospects of SiC devices in electric vehicle are presented; last, the main problems of EV driving system using SiC power devices are discussed. [1-2]