Ag-S共掺杂ZnO薄膜光电性质研究.pdfVIP

第十五届全国化合物半导体、微波器件和光电器件掌术会议 广州’08 WED．ZnO—D03 Ag-S共掺杂ZnO薄膜的光电性质研究 孙利杰邬小鹏徐小秋林碧霞傅竹西 (中国科学技术人学物理系安徽合肥230026) 摘要：氧化锌的P型掺杂足其器件化的关键|’廿J题。为解决这1难题，本文首次在实验I：通过Ag—s共掺杂存si基片上来制备出P 型ZnO薄膜。XRD和SEM测试表明，所得样品为C轴高度取向，月．表面甲整致密的ZnO薄膜。XPS测试证实了Ag、S的有效掺入。 通过对h93d的窄区扫描图分析发现样品中存在AgT．-nSo复合缺陷。低温PL谱测试观测到了勺该复合缺陷有关的Aox发射。计 算得到其受主能级离价带顶158meV，这比Ag。受主能级浅许多，表明Ag、s共掺能较好地解决Ag掺杂的深受主问题。在此荩础 上制备了n—ZnO／ZnO：(Ag，S)同质结，室温I—V测试表明，该结有良好的整流特性，证实Ag、s共掺的ZnO薄膜是p型电导。 关键词：共掺杂复合缺陷AoX发射间质结 中图分类号：0484 文献标汉码：A 文章编号 andElectrical of ZnOfilm Optical propertiesAg—Scodoped Liie Fu J Sun，XiaopengWu，XiaoqiuXu，BixiaLin，Zhuxi ofScienceand (DepartmentofPhysics，UniversityTechnologyofChina，Hefei，230026，China) as Abstract：ZnOisconsidereda materialfor devicesbutone remainstobe promising optoelectronic majorproblem solved：p-type this fabricated ZnOthinfilmontheSisubstrateradio doping．Inpaper,wefirstly Ag—ScodopedPtype by frequency(RF)magnetron andthermal method．XRDandSEMmeasurementsshowthe is wurtzitestructurewitha sputtering oxidizing samplehexagonal andthesurfaceis of anduniform measurementobserved defect preferential(002)orientation compact grains．XPS Agz。一nSo composed inthe Zn0 PL showedneutral excitontransitionsrelatedto complexesAg—Scodopedfilm．Lowtemperaturespectra acceptorbonding defect ionizationof158meVismuchlowerthanthatofthe Agzn—nSo complexes．Thecorrespondingacceptor energy Agmonodoped．The derivedfromtheintrinsic ZnO showthe current-voltage(I-V)characteristicsn—ZnO／Ag—Sdoped homojunctionc