InductorlessWideband CMOS Low-Noise Amplifiers.PDFVIP

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 59, NO. 2, FEBRUARY 2012 305 Inductorless Wideband CMOS Low-Noise Amplifiers Using Noise-Canceling Technique Ke-Hou Chen, Student Member, IEEE, and Shen-Iuan Liu, Fellow, IEEE Abstract— Two inductorless wideband low-noise amplifiers high power consumption, large chip area, and inadequate NF. (LNAs) fabricated in a 65-nm CMOS process are presented. By Moreover, the tradeoff between wideband input matching and using the gain-enhanced noise-canceling technique, the gain at low NF makes the design difficult and complicated. noise-cancelling condition is increased, while the input matching is maintained. The first work is a common-source LNA with A noise-canceling technique [6] has been widely used to re- resistive shunt feedback. It achieves a maximum power gain of lease the tradeoff in the wideband LNAs. The noise of the input 10.5 dB, a bandwidth of 10 GHz, a noise figure (NF) of 2.7–3.3 dB, matching transistor is reduced through a feedforward path, and an IIP3 of dBm. The power consumption is 13.7 mW while the input impedance is matched simultaneously. The from a 1-V supply, and the area is 0.02 mm . The second work amplifiers that adopt this technique have several advantages. is a common-gate LNA. It achieves a maximum power gain of 10.7 dB, a bandwidth of 5.2 GHz, a NF of 2.9–5.4 dB, and an IIP3 They accomplish wideband input matching, relative low NF, of dBm. The power consumption is 7 mW from a 1-V supply, sufficiently voltage gain, and high linearity. However, in order and the area is 0.03 mm . Experimental results demonstrate