采用噪声抵消技术的宽带SiGeHBT低噪声放大器设计.pdfVIP

第 33卷 第 4 期 电 子 器 件 Vo l. 33　No. 4 20 10年 8月 Ch ine se Jou rnal of E lectron D evice s Aug. 20 10 D esign of Broadband S iGe HBT L NA Em ploy ing No ise Cancella tion Techn ique SUN B otao, ZHAN G W an rong , X I E H ongy un, CHEN L iang, SHEN P ei, HUAN G Yiw en, YOU Yunx ia, WAN G R enqing (S chool of E lectron ic Inf orm a tion and Con trol E ng ineering, B eij ing Un iversity of Technology, B eij ing 100 124, Ch ina) A b stract: The imp edance m atch ing and the no ise m atch ing m u st be con sidered when de sign ing a w ideband low ( ) no ise amp lifier LNA . However, they are coup led together. Existing w ideband m atch ing techno logie s have to fre quen tly adju st circu it p aram eters to tradeoff between imp edance m atch ing and no ise m atch ing. Th is m ake s the de sign comp lex. In th is p ap er, a no ise canceling techno logy is p re sen ted. B y p arallelling two equal gain b ranche s, the no ise induced by the inpu t m atch ing is canceled at the ou tpu t. A s a re su lt, the imp edance m atch ing and the μ no ise m atch ing are decoup led. B a sed on JA ZZ 0. 35 m SiGe techno logy, a w ideband amp lifier u sing no ise cancel ling techno logy is de signed. Over the bandw idth range from 0. 8 to 2. 4 GH z, the LNA ha s a gain more than 16 dB , a no ise figu re below 3. 25 dB , and a S le ss than - 17 dB. 11 Key words: low noise amp lifier; imp edance m atch ing; noise m atch ing; noise cancelin