短波长谐振腔发光二极管光谱的研究.pdfVIP

PL and EL Study of Short Wavelength RCLED 1 WEI Jiyong HUANG Baibiao QIN Xiaoyan ZHANG Xiaoyang Institute of Crystal Materials, National Key Lab of Crystal Growth, Shandong University Jinan 250100 Abstract: Grow 650 nm wavelength RCLED by MOCVD, and characterize the emission property by PL and EL. PL intensity of RCLED is about 1/20 of common LED; EL purity enhanced from common LED’s FWHM about 20 nm decreased to RCLED’s FWHM of 3-4 nm. Characterize of device show that we can obtain 1.45 mW emission power at 60 mA, 2.71V.