Low Gate Voltage Operated Multi-emitter-dot H^＋ Ion-Sensitive Gated Lateral Bipolar Junction Transistor.pdfVIP

CHIN．PHYS．LETT．Vo1．32，No．2(2015)020701 Low GateVoltageOperatedM ulti-emitter—dotH+ Ion—SensitiveGatedLateral BipolarJunction Transistor YUANHeng(袁珩)，。，ZHANGJi—xing(张冀星)，ZHANGChen(~ ) ，ZHANGNing(~ )，一， XULi．Xia(徐丽霞)，一，DINGMing(T铭)，一，PatrickJ．Clarke ScienceandTechnologyonInertialLaboratory,BeihangUniversity,Beijing100191 SchoolofInstrumentationScienceandOpto-electronicsEngineering，BeihangUniversity,Beijing100191