连占鹏论文.doc

摘 要 ZnO是一种II-VI族直接宽带隙半导体，有望取代GaN用于新一代的短波长光电器件。本论文概述了ZnO的基本性质、制备方法及其在多种光电器件的应用，阐述了溶胶-凝胶法制备ZnO薄膜的原理及研究现状。 本实验以二水合乙酸锌、单乙醇胺和乙二醇甲醚为原料，采用溶胶-凝胶法将ZnO薄膜提拉在玻璃衬底上。利用X射线衍射仪（XRD）和扫描电镜（SEM）对ZnO薄膜的晶体结构和表面形貌进行了表征。ZnO薄膜形貌性质优异，具有六方纤锌矿结构且有强烈的c轴择优取向，扫描电镜图像表明ZnO薄膜表面致密、平整、均匀，晶粒的平均尺寸大约在18-55 nm 使用控制变量方法研究了溶胶浓度、陈化时间、提拉速度、涂膜层数及煅烧工艺对ZnO薄膜c轴择优取向和表面形貌的影响，结果表明煅烧工艺的影响较显著。当溶胶浓度为0.3 mol/L、陈化时间为1天、提拉速度为5.0 cm/min、涂膜层数为5层、煅烧两次且最后一次煅烧温度为5 ℃、煅烧时间为1 h时得到的ZnO薄膜结晶性和表面形貌最好。 ： ZnO薄膜；c轴择优取向；溶胶-凝胶法；表面形貌 Zinc oxide is a direct wide band gap II-IV compound semiconductor, which is considered yo be a new photoelectric material in short wavelength taking place of GaN.This paper summarizes the basic nature, ZnO preparation methods and in a variety of photoelectric device of application, this paper illustrates the principle and the present research of ZnO thin films preparation by sol-gel method are given. This experiment with two hydrated zinc acetate, ethanolamine and ethylene glycol ether for a raw material,ZnO thin film was pulling in glass substrate, through sol-gel method. The crystal structure and surface morphology of films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).ZnO thin film was excellent properties, with six party constitution structure and strong foreign c shaft preferred orientation, scanning electron microscopy (SEM) image shows that ZnO thin film surface density, level off, even, the grain size of the average about in the 18-55 nm. Using the control variable method to study the influence of sol concentration, aging time and pulling rate , coating layer and burning process on c-axis preferred orientation and shaft surface morphology of ZnO films,and the results show that the influence of the calcination process are obvious. When sol concentration is 0.6 mol/L, aging time is 1 day, pulling rate is 5.0 cm/min, film layer are 5 layers, calcining temperature is 500 ℃ and calcining time is 1 h ,that get the best ZnO film. Keywords: ZnO films;