氧气对MWPCVD制备金刚石膜的影响.pdfVIP

第 21 卷 　第 4 期 真 　空 　科 　学 　与 　技 　术 　　　　　　　　　　 ( ) 　　　　　　　　　　　　　　 2001 年 7 月 VACUUM SCIENCE AND TECHNOLO GY CHINA 281 氧气对 MWPCVD 制备金刚石膜的影响 1) 舒兴胜 　邬钦崇 　梁荣庆 ( 中国科学院等离子体物理研究所 　合肥 　230031) Influence of O2 on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition Shu Xingsheng ,Wu Qinchong ,Liang Rongqing ( Institute of Plasm a Physics , The Chinese Academy of Sciences , Hef ei ,230031) 　　Abstract 　Diamond films were synthesized from CH H O gas mixture by microwave plasma chemical vapor deposition (MW 4 2 2 PCVD) in a watercooled reaction chamber. Influence of O concentration on the film growth was studied with laser Raman spectros 2 copy and scanning electron microscop y ( SEM) . The results show that very low O2 concentration markedly promotes diamond film de position but slightly suppresses the amorphous carbon growth. Consequently ,the content of amorphous carbon in the diamond films was drastically reduced. In contrast , higher O2 concentration slows down the deposition of diamond more pronounced than that of amorphous carbon and results in higher content of amorphous carbon in the films. In addition ,the existence of O favorably affects the 2 growth of diamond films with smaller grain sizes. 　　Keywords 　Microwave plasma chemical vap