大面积完整纳米压印技术在大功率LED上与应用.pdfVIP

大面积完整纳米压印技术在大功率LED上的应用 靳彩霞1杨新民1王汉华1 艾常涛 刘文2王智浩2董志江1 1.武汉迪源光电科技有限公司，武汉430074 2.武汉光电国家实验室，武汉430074 摘要：采用软模板压印技术和双层光刻胶技术在基于图形衬底制备的GaN基蓝光外延片上制备p-GaN 和 ITO表面纳米图形的大功率LED。纳米图形在基底上大面积形成，孔径均匀，GaN和 ITO表面纳米图形 的占空比分别为0.5和0.2，呈三角排列圆形孔状晶体结构；通过表面晶体结构的排列方式进行光子能带 模拟，两种纳米图形均存在光子禁带，为典型的二维光子晶体结构。与传统LED比较，含ITO纳米图形和 GaN纳米图形的LED光致发光效率分别提高7倍和11倍，在350mA电流驱动下，电性参数并未降低，电致 发光效率分别提高5.06％和14.18％。 关键词：发光二极管；纳米压印；双层光刻胶；光子晶体 TheApplicationofLarge-areaConformalNanoimprintLithography inHighPowerLightEmittingDiodes JinCaixia1YangXinmin1WangHanhua1AiChangtao1LiuWen2WangZhihaoD2ongZhijiang1 1.AqualiteCo.Ltd,Wuhan430074,China 2.WuhanNationalLaboratoryforOptoelectronics,Wuhan430074,China Abstract:ThehighpowerLEDwithnanostructureonp-GaNandITOsurface,wasfabricatedusing Metal-organicChemicalVaporDepositiononpatternedsapphiresubstrates,IntermediatePolymerStamp,bi-layer photoresistandSemiconductorManufacturingtechnologies.Asaresult,thenanostructurewasuniformlyformed onlargeareaconformalsubstrate,thedutyratioofGaNandITOnanostructureswere0.5and0.2,respectively, andbothofthepatternwereholewithtrianglelatticearray,fromthefinite-differencefrequency-domain simulation,somephotonicbandgapexistedforTEandTMmode.Theanalysisshowedthattheimprovementin thePLintensitycouldbeashighas7timesand11timeswiththeITOnanostructureLEDandtheGaN nanostructureLED,comparedwiththeconventionalLED.Atadrivingcurrentof350mA,theELintensityofan LEDwithITOnanostructureandanLEDwithGaNnanostructurewereenhancedby5.06％ and14.18％, respectively,comparedwiththeconventionalLED,andnoelectricaldegradationwasobserved. Keywords:lightemittingdiodes;nanoimprint;bi-layerphotoresist;photoniccrystal 件发光效昌 勾p-GaN纳米图死 竞(FE-SEM，$550C 生基底上大面积威 r口盯llUJ ITO-LE 宽度 也 qUa [11． OfI