ICMEMS Fabrication - Outline.ppt

IC/MEMS Fabrication - Outline Fabrication overview Materials Wafer fabrication The Cycle: Deposition Lithography Etching Fabrication IC Fabrication Deposition Spin Casting PVD – physical vapor deposition CVD – chemical vapor deposition Lithography Removal Wet etching Plasma etching Bulk Micromachining Surface Micromachining MUMPS DRIE – deep reactive ion etch Materials Single crystal silicon – SCS Anisotropic crystal Semiconductor, great heat conductor Polycrystalline silicon – polysilicon Mostly isotropic material Semiconductor Silicon dioxide – SiO2 Excellent thermal and electrical insulator Thermal oxide, LTO, PSG: different names for different deposition conditions and methods Silicon nitride – Si3N4 Excellent electrical insulator Aluminum – Al Metal – excellent thermal and electrical conductor Silicon properties Semiconductor Electrical conductivity varies over ~8 orders of magnitude depending on impurity concentration (from ppb to ~1%) N-type and P-type dopants both give linear conduction, but from fundamentally different mechanisms N-type touching P-type forms a diode Cubic crystal Diamond lattice Anisotropic mechanical properties Diamond Lattice Periodic Table Band Structure of Electron Energies /wwwusers/watson/scen103/99s/clas0416.html Bohr atom, Pauli exclusion principle (not exactly right, but gives some intuition) Band structure of Semiconductors Conductors, insulators, semiconductors Doping semiconductors Two different types of conduction Electrons (negative, N-type) Holes (positive, P-type) Diodes Silicon wafer fabrication Taken from www.egg.or.jp/MSIL/english/index-e.html Silicon wafer fabrication – slicing and polishing Taken from www.egg.or.jp/MSIL/english/index-e.html Process Flow Integrated Circuits and MEMS identical Process comlexity/yield related to # trips through central loop Deposition Issues - Compatibility Thermal compatibility Thermal oxidation and LPCVD films are mutually compatible Thermal oxidation and LPCVD are not compatible with