激光二极管抽运的被动调q微晶片激光器仿真大学毕业设计论文.docVIP

毕业论文 激光二极管抽运的被动调Q微晶片 激光器仿真研究 院 别 专 班级姓名 指导教师 2015年6月8日  激光二极管抽运的被动调Q微晶片激光器仿真 摘要 A passively Q-switched diode pumped microchip Lasers simulation Author： Tutor：Abstract A laser diode (LD) pumped microchip lasers have all solid, small size, simple structure features and so on.Q - known as Q-switch technology, continuous laser energy is compressed into the general output pulse width extremely narrow emission, so that the peak power of the light source can be increased several orders of magnitude of a technique, in order to obtain high peak power, narrow width pulse laser.Passively Q is activated by the laser radiation itself, Q switch is filled with organic dyes such as crystal or doped optical elements. This paper introduces the purpose of laser diode pumped passively Q technology,the significance and development.By passively Q-switched lasers theoretical analysis.we can got the equations that the gain medium inversion density, can be saturated and the absorbent core population inversion density and cavity photon number density of the mutual coupling between .Microchip lasers have high doping concentration, cavity length features, will inevitably have an impact on the process and passively Q parameters. We will use Matlab to simulate the characteristics of passively Q-switched laser.Then consider the Cr:YAG rsaturable absorption excited state absorption body to obtain a continuous laser diode pumped Cr:YAG passively Q Nd: YAG microchip lasers coupled equations, and analysis passively Q-analysis process.On the basis of numerical simulation, you can get different parameters of passively Q-switched output accurate results.Take microchip lasers typical values of each physical factor, programmed to solve the microchip laser rate equations corresponding to make the photon number density inversion density and