单晶硅低能电子束辐照效应.pdfVIP

第29 卷 第2期 总第130期 V o l29 N o2 J ournal of M at erials Science Engineering A pr . 20 11 : 2011) ( 621900) M ont erCarlo Si ( EPR) ( 111) 110 15 cm - 3 1 1017 cm- 3 X ( XPS) SiSiO2 P Si N SiN Si PO H C P2 P ; ; ; + : T N 304. 1 2 : A Radiation Effects on Singlecrystal Silicon of Low Energy Electron Beam G OHui,W NG Heyi, ZH NGHuaming,HU NGLibing,HE Xiaobo, ZHOU Yinhang (Institute of NuclearPhysics and Chemistry, China cademy of Engineering Physics, Mianyang 621900, China) bstract T he energy deposit ion fo r elect ron beam w it h lo w energy on Si specim en s w as calculat ed by Mo nt erCarlo met ho d. M aking u se of elect ron paramagnet ic resonance ( EPR) t echnique t he invest igat ion of the ef fect s of EP R sig nal variat io ns in do pant t yp e and concent rat ion w as carried out by u sing Pt yp e and Nt y pe 15 - 3 17 - 3 ( 111) silicon w af ers w it h concent rat io ns o f 1 10 cm and 1 10 cm resp ect ively befor e and af t er the irradiation of elect ron s and t he inten sit ies of def ect paramag net ic centers befo re and aft er irradiat io n o f elect ron w ere com pared. T he chemical st at es of SiSiO2 syst em w ere determined by Xray phot oelect ron spect ro scopy ( XP S) . T he results clearly indicat e t hat t he eff ect s of dopant v ar iat ion s ( t y pe and concentr at ion) are of o bv io us dif ference. Comp ared w it h P t yp e silicon specially N t ype silicon w it h a high dopant concentr at ion t ends to pro du ce def ect s at int erf ace under lo w ener gy