GaN基LED电流分布的模拟.pdfVIP

2010年第 23卷第8期 # Electronic Sci1 Tech1 /Aug115, 2010 GaN LE 刘 毅, 赵广才, 李培咸 ( , 710071) 采用 Silvaco软件, 利用二维有限元方法, 仿真得到 LE 的电学等特性比较 3种不同尺寸的 LE 器件 内的电流分布, 得到电流密度与L 的关系曲线, 发现减小电流扩展长度L 可提高电流的均匀性模拟了 5种不同电极 结构的 1mm @ 1mm 功率 LE , 发现五插指电极结构的电流分布最均匀 GaN; LE ; 电流分布; 电极结构 + TN30412 3 A 1007- 7820( 2010) 08- 043- 04 S im ulation and O ptim ization of Curren t D istribu tion in G aN-ba sed LED s LiuY ,i Zhao Guangcai, LiPeixian ( School ofTechnical Physics, X idianUniversity, X ipan 710071, China) Abstract Electrical propertiesof a LE ( light em itting diode) is smi ulatedw ith the software of SILVACO, by using two-dmi ensional finite elementmethod. The current distributions of three LE sof different size are compared, and the relationship between the current density and L is found, which indicates that current uniformity can be mi - proved by reducing the current expansion length(L ). Five different kindsof powerLE swith a chip size of 1mm @ 1mm and with different electrode structures are smi ulated and compared, and the optmi al electrode structure is found. K eyw ords GaN; LE ; current spreading; electrode structure GaN Ó- Õ 1mm @ 1mm LE , , GaN(LE ) , 1 LE LE (MOCV ) 1GaN ( SQ) , (LE ), 3 nm, [ 1- 3] 18 - 3 , p n 3 Lmn- GaN, 5 @ 10 cm ); , ,