TSV转接板硅通孔的热应力分析_安彤.pdf

30 7 Vol.30 No.7 2013 7 July 2013 ENGINEERING MECHANICS 262 1000-4750(2013)07-0262-08 TSV 1 1 1 2 2 3 (1. 1001242. 1000293. 200433) (TSV)(3D)TSV TSV TSV 3 (TSV) O343.6 A doi: 10.6052/j.issn.1000-4750.2012.04.0236 ANALYSIS OF THERMAL STRESS IN THROUGH SILICON VIA OF INTERPOSER 1 1 1 2 2 3 AN Tong , QIN Fei , WU Wei , YU Da-quan , WAN Li-xi , WANG Jun (1. College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China; 2. Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; 3. Materials Science Department of Fudan University, Shanghai 200433, China) Abstract: Through silicon vias (TSV) has been given an extensive attention because it is a key enabling technology for three dimensional (3D) IC. In this paper, the thermal stresses of the fully copper-filled and partially copper-filled vias subjected to temperature excursion were investigated, and the analytical solutions of stresses in the copper and the silicon were proposed. The solutions have been used to investigate the effect of the ratio of via pitch to via diameter and the radial thickness of copper. A two dimension finite element model was established and used to validate the analytical solution. The results suggest that the analytical solution can give a good estimation of thermal stress in the copper and silicon; the stress in the silicon can be reduced by decreasing the radial thickness of the electroplated copper; the stresses change linearly with the temper