berkley_半导体工艺讲义08--离子注入.pdfVIP

  • 12
  • 0
  • 约1.85万字
  • 约 22页
  • 2015-09-25 发布于湖北
  • 举报
berkley_半导体工艺讲义08--离子注入.pdf

EE143 F05 Lecture 8 1) Implant Profile depends only on incident ion momentum, NOT on charge state A+ Same Same implant A momentum profile A- Note : Kinetic Energy = (momentum)2 /2M 2) Charge carried by ions will be neutralized by charges in the substrate after implantation. 3) n, p, Nd+, Na- charges in semiconductors are caused by the chemistry of the implanted

文档评论(0)

1亿VIP精品文档

相关文档