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Effect of Dopinginduced Disorder on Transition Temperature in High T_c Cuprates
Effect of Doping-induced Disorder on Transition Temperature in High Tc Cuprates
Hae-Young Kee
Department of Physics, University of California, Los Angeles, CA 90095
(February 6, 2008)
0
0 We study the effect of disorder induced by doping on the transition temperature in high Tc
0 cuprates. Since the impurity lies between the CuO2 planes, the momentum transfer is restricted
2 by small angle with a range of order of 1/(dkF ), where kF is the Fermi momentum and d is the
v distance between the plane and the impurity. We find that the leading correction on the transition
o temperature in this case is in cubic order of 1/(dkF ), while the single particle scattering rate is
N linearly proportional to 1/(dkF ). Therefore, we conclude that the disorder induced by doping has
rather small effect on T , while it could give large single particle scattering rate. We find that the
c
3 reduction of Tc is about 3 − 10%, using the single particle scattering rate (150 − 450K) observed
2 in the recent angle-resolved- photoemission-spectroscopy data on optimally doped Bi2212. The
consequences of the small angle scattering in other physical quantities such as transport are also
]
n discussed.
o
c PACS numbers: 74.62.Dh, 74.72.-h
-
r
p A recent angle-resolved-photoemission-spectroscopy
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