chemical mechanical planarization .pdfVIP

Rogers, Coppeta, Racz, Philipossian, Journal of Electronic Materials, Vol. 27, No. 10, 1998 Special Issue Paper 1082 Kaufman, and Bramono Analysis of Flow Between a Wafer and Pad During CMP Processes 1 1 1 2 C. ROGERS, J. COPPETA, L. RACZ, A. PHILIPOSSIAN, 3 1 F.B. KAUFMAN, and D. BRAMONO 1.—Tufts University, Department of Mechanical Engineering, Medford, MA. 2.—Intel Corpora- tion, Santa Clara, CA. 3.—Cabot Corporation, Aurora, IL In this paper, we summarize the development of a numerical model for the chemical mechanical planarization CMP process and experimentally investi- gate the effects of pad conditioning on slurry transport and mixing. A simplified two-dimensional numerical model of slurry flow beneath a stationary wafer was developed to determine the pressure and shear stress beneath a wafer. The initial results indicate that in the hydrodynamic regime a positive upward pressure is exerted on the wafer. We also examined three cases to study pad effects on slurry transport; polishing with an Embossed Politex pad, an uncon- ditioned IC1000 pad, and a conditioned IC1000 pad. Cab-O-Sperse SC1 slurry was used in a 1:1.5 dilution with water. Mixing data show that conditioning has a negligible effect on the rate of slurry entrainment and mixing; however, conditioning has a large effect on the thickness of the slurry layer between the wafer and pad. Conditioning was found to increase the slurry thickness by a factor of two. In addition the gradients in slurry age beneath the wafer were compared among the three cases. The IC1000 pads supported a gradient in the inner third of the wafer only, while the Embossed Politex pad showed a linear gradient across the wafer implying it retains pockets of unmixed slurry in the embossed topography. Key words: Chemical mechanical planarization CMP , chemical mechanical polishing, CMP numerical simulation, dual emission laser induced fluorescence perimental work. It is importa