《Electronic properties of light-induced recombination centers》.pdfVIP

Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon Jan Schmidt and Andrés Cuevas Citation: J. Appl. Phys. 86, 3175 (1999); doi: 10.1063/1.371186 View online: /10.1063/1.371186 View Table of Contents: /resource/1/JAPIAU/v86/i6 Published by the American Institute of Physics. Additional information on J. Appl. Phys. Journal Homepage: / Journal Information: /about/about_the_journal Top downloads: /features/most_downloaded Information for Authors: /authors Downloaded 01 Apr 2013 to 62. This article is copyrighted as indicated in the abstract. Reuse of AIP content is subject to the terms at: /about/rights_and_permissions JOURNAL OF APPLIED PHYSICS VOLUME 86, NUMBER 6 15 SEPTEMBER 1999 Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon a) ´ Jan Schmidt and Andres Cuevas Department of Engineering, Faculty of Engineering and Information Technology, The Australian National University, Canberra ACT 0200, Australia Received 18 March 1999; accepted for publication 7 June 1999 In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski Cz silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p -type Cz silicon wafers of various resistivities 1–31 cm prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range betw