《Single-layer MoS2 transistors》.pdfVIP

LETTERS PUBLISHED ONLINE: 30 JANUARY 2011 | DOI: 10.1038/NNANO.2010.279 Single-layer MoS2 transistors 1 2 1 1 1 B. Radisavljevic , A. Radenovic , J. Brivio , V. Giacometti and A. Kis * 4 7 Two-dimensional materials are attractive for use in next-gener- Ion/Ioff between 1 × 10 and 1 × 10 and a bandgap exceeding ation nanoelectronic devices because, compared to one-dimen- 400 meV (ref. 26) are desirable. sional materials, it is relatively easy to fabricate complex The starting point for the fabrication of our transistors was structures from them. The most widely studied two-dimensional scotch tape-based micromechanical exfoliation1,17 of single-layer material is graphene1,2, both because of its rich physics3–5 and its MoS2. MoS2 monolayers were transferred to degenerately doped high mobility6. However, pristine graphene does not have a silicon substrates covered with 270-nm-thick SiO2 (Fig. 2a). We bandgap, a property that is essential for many applications, have previously found that this oxide thickness is optimal for including transistors7. Engineering a graphene bandgap optical detection of single-layer MoS2 , and have established the cor- increases fabrication complexity and either reduces mobilities relation