《基片温度对微晶硅薄膜微观结构和光学性能的影响》.pdf

25 4 Vol.25 No.4 2 0 1 1 8 CHINESE JOURNAL OF MATERIALS RESEARCH August 2 0 1 1 1,2 2 2 3 1 1. 110016 2. 130117 3. 116024 Ar+SiH4 , (ECR–PECVD) , , , Æ, , H , 1.89 eV 1.75 eV , , ECR–PECVD, , TB321, O484 1005-3093(2011)04-0408-05 Influence of Substrate Temperature on Microstructure and Optical Properties of Microcrystalline Si Films CHENG Hua1,2 WANG Ping2 CUI Yan2 WU Aimin3 SHI Nanlin1∗∗ 1.Institute of metal research, Chinese Academy of Sciences, Shenyang 110016 2.Armor technique institute of PLA, Changchun 130117 3.Dalian university of technology, Dalian 116024 Manuscript received December 16, 2010; in revised form April 23, 2011. * To whom correspondence should be addressed , Tel:(024 E–mail:nlshi@imr.ac.cn ABSTRACT Microcrystalline silicon films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on microstrcture and optical properties of microcrystalline silicon films were investigated. The results show that, with the increasing of the substrate temperature, the crystallinity and roughness increased, but the concentration of hydrogen decreased monotonously. Furthermore, the absorption coefficient of the films increased monotonously, and the optical bandgap changed from 1.89 eV to 1.75 eV with the substrate temperature ranging from 200 to 500 . KEY WORDS synthesizing and processing