AIP 2012 Evaluation and modeling of lanthanum diffusion in TiNLa2O3HfSiONSiO2Si high-k stacks教材.pdfVIP

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AIP 2012 Evaluation and modeling of lanthanum diffusion in TiNLa2O3HfSiONSiO2Si high-k stacks教材.pdf

Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks Z. Essa, C. Gaumer, A. Pakfar, M. Gros-Jean, M. Juhel et al. Citation: Appl. Phys. Lett. 101, 182901 (2012); doi: 10.1063/1.4764558 View online: /10.1063/1.4764558 View Table of Contents: /resource/1/APPLAB/v101/i18 Published by the American Institute of Physics. Related Articles Studies of carrier recombination in solution-processed CuIn(S,Se)2 through photoluminescence spectroscopy Appl. Phys. Lett. 102, 063902 (2013) SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion

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