AIP 2012 Evaluation and modeling of lanthanum diffusion in TiNLa2O3HfSiONSiO2Si high-k stacks教材.pdfVIP
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Evaluation and modeling of lanthanum diffusion in
TiN/La2O3/HfSiON/SiO2/Si high-k stacks
Z. Essa, C. Gaumer, A. Pakfar, M. Gros-Jean, M. Juhel et al.
Citation: Appl. Phys. Lett. 101, 182901 (2012); doi: 10.1063/1.4764558
View online: /10.1063/1.4764558
View Table of Contents: /resource/1/APPLAB/v101/i18
Published by the American Institute of Physics.
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