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《Lam3 Aluminum RIE Etcher》.pdf
Lam3 Aluminum RIE Etcher
(lam3)
1.0 1.0 Title
Lam3 Aluminum RIE Etcher
2.0 2.0 Purpose
Lam3 is an automatic, cassette-to-cassette, single wafer RIE etcher for aluminum film
etching.
3.0 3.0 Scope
This document describes the general operation of Lam3. It also covers the recipe
loading/modifying procedures and how to set up the automatic endpoint detection.
4.0 4.0 Applicable Documents
4.1 Chapter 7.0 of the Microlab Manual (Lam Etchers Overview)
4.2 AutoEtch Plasma Etch System, Operation and Maintenance Manual, Lam
Research, 1989. (There is a copy in the Microlab office.)
5.0 5.0 Definitions Process Terminology
5.1 5.1 RIE Etcher: An etcher that uses the radical gas atoms/molecules,
generated by plasma, as the main etchants to remove the thin film material on a
substrate or the substrate itself. In addition, the process wafers sits on the RF
powered electrode, hence a large electrical bias will attract positive charged ion in
the plasma to bombard the wafer surface. The added ion bombardment will
increase the etch rate and make etch byproduct more volatile.
5.2 5.2 Powered Load Lock (PLL): Lam3 used the exit load lock to passivate the
etched aluminum surface. It uses CF / O plasma to replace the Cl residue on the
4 2
etch surface and in the photo-resist. It also results in a protective film on the
aluminum surface.
5.3 5.3 Etch Rate (ER): The rate of the thin film being etched away, usually in
A/minute.
5.4 5.4 Etch Non-Uniformity: A measure of the etch uniformity. It is defined as
(max ER – min ER)/(2 X average ER), usually in %.
5.5 5.
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