《Partial-SOI high voltage laterally double-diffused MOS with a partially buried n＋-layer》.pdf

Chin．Phys．B Voi．23，No．6(2014)067101 Partial-SOIhighvoltagelaterallydouble-diffusedM OS withapartiallyburiedn+-layer木 ． HuSheng．Dong(胡盛东)))十，WuXing．He(武星河)，ZhuZhi(~ 志)， JinJing—Jing(金晶晶)，andChenYin—Hui(陈银晖)) )CollegeofCommunicationEngineenng ChongqingUniversity,Chongqing400044，China ， b)NaonajLaboratoryofAnalogueIntegratedCircuitsNo．24ResearchInstituteofChina ， ElectricsTechnologyGroupCorporation，Chongqing400044，China (Received12October2013；revisedmanuscriptreceived11December2013；publishedonline10April2014) A novelpartialsilicon—on．insulatorlaterallydouble。diffusedmetal-oxide-semiconductortransistor(PSOILDM0S) withathinbuffedoxidelayerisproposedinthisPa1)er．Thekeystructurefeatureofthedeviceisann layer，whichis partiallyburiedonthebottominterfaceofthetopsilicon1ayer(PBNLPS0ILDM0S1．Theundepletedinterfacen十一layer leadstoplentyofpositivechargesaccumulatedontheinterface．whichwillmodulatethedistributionsofthelatera1and verticalelectricfieldsforthedevice，resultinginahighbreakdownvoltage(BV)．Withthesamethicknessvaluesofthe topsiliconlayer(10Ixm)andburiedoxidelayer(O．375 m)，theBVofthePBNLPSOILDM0Sincreasesto432Vfrom 285V oftheconventionalPS0ILDM0S．whichisimprovedbv51．6％． Keywords：silicon—on—insulator,breakdownvoltage，interfacecharges，electricfield PACS：71．10．一w．73．20．-r,73．40．Qv,73．40．Ty DOI：10．1088／1674—1056／23／6／067101 1．Introduction buri