原创力文档《Simulating and modeling the breakdown voltage in a semi-insulating GaAs P＋N junction diode》.pdf
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《Simulating and modeling the breakdown voltage in a semi-insulating GaAs P＋N junction diode》.pdf
Vo1．35，No．8 JournalofSemiconductors AUClust2014
Simulatingandmodelingthebreakdownvoltagein a semi-insulatingGaAsP+N
junctiondiode
A．ResfatBrahimi．R．Menezla，andM ．Benchhima
，
LaboratoryofModelingandConceptionoftheCircuitsElectronic，DepartmentofElectronics，UniversityDjillaliLiabbs，BP89
SidiBelAbbes22000，Algeria
Abstract：ThisworkaimstodeterminethecharacteristicI(breakdownvoltage)oftheinversecurrentinaGaAs
PNiunctiondiode，subjecttoareversepolarization，whilespecifyingtheparametersthatinfluencethebreakdown
voltageofthediode．Inthiswork wesimulatedthebehavioroftheionizationphenomenonbyimpactbreakdown
byavalancheofthePNiunctions，subjecttoaninversepolarization．
Welwilltakeintoaccountboththetrappingmode1inastationaryregimeintheP十N structureusinglikematerial
ofbasistheIII—V compoundsandmainlytheGaAssemi—insulating inwhichthedeepcentershaveinimportant
densities．Wearetalkingaboutthemodeloftrappinginthespacechargeregion(SCR)andthatisthetrapdensity
donorandacceptorstates．
Thecarriercrossingthespacechargeregion(SCR)ofW thicknesscreatesN electron-holepairs：forevery
createdpair,theelectronandtheholearesweptquicklybytheelectricfield，eachinanoppositedirection，which
comesback，accordingtoanalreadyacceptedreasoning，tothecrossingofthespacechargeregion(scR)byan
electronorahole．SotheevenN paircreatedbytheinitia1particleprovokeN2ionizationsandsoforth．
Thestudyofthephysicalandelectricalbehaviourofsemiconductorsisbasedontheinfluenceofthepresenceof
deepcentersonthecharacteristicJ(1current—tension，whichrequiresthecalculationoftheelectrostaticpotential，
theelectricfield，theintegralofionization，theden
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