Quality control method based on photoluminescence imaging for the performance prediction of c-Sia-SiH heterojunction solar cells in industrial production lines》.pdfVIP

Solar Energy Materials Solar Cells 144 (2016) 210–220 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat Quality control method based on photoluminescence imaging for the performance prediction of c-Si/a-Si:H heterojunction solar cells in industrial production lines O. Nos a,n, W. Favre a, F. Jay a, F. Ozanne a, A. Valla a, J. Alvarez b, D. Muñoz a, P.J. Ribeyron a a CEA/LITEN/DTS, INES, 50 Avenue du Lac Léman, 73377 Le Bourget-du-Lac, France b LGEP, CNRS UMR 8507, SUPELEC, Université de Paris-Sud, UPMC Univ Paris VI, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France a r t i c l e i n f o a b s t r a c t Article history: Photoluminescence (PL) imaging is a fast and contactless technique that allows visualizing defective Received 18 June 2015 regions of a solar cell where local carrier lifetime is reduced. In this paper we present a PL based method Received in revised form for the quantification of such defective areas in the case of a-Si:H/c-Si heterojunction solar cells produced 28 August 2015 in an industrial pilot line. After a description of the methodology used for obtaining a “defectivity Accepted 2 September 2015 parameter” Gd from the open-circuit PL images, we show that the efficiency of non-metallized cells produced in this line can be predicted from their Gd value with absolute deviations low